Presented are the results of studying the growth peculiarities of InAs binary compounds and InxGa1-xAs solid solutions on GaAs wafers by MOVPE depending on a number of technological parameters: temperature (in the range of 480 – 700 oC), the ratio of the V and III group atoms in the gas phase (V/III-ratio) and substrate misorientation. Based on analysis of photoluminescence spectra of InxGa1-xAs quantum wells the dependence of In composition in InxGa1-xAs solid solution on the gas phase composition and the dependence of InAs growth rate on In molar flow were calculated.
The obtained data were used for the growth of InAs quantum dots (QDs) by Stranski-Krastanov mode on GaAs surface. Three-dimensional growth mode of GaAs was investigated and the conditions provided the planar surface for deposition both of single-layer InAs QDs and QD arrays with a small number of defects were found. The analysis of PL spectra at different temperatures and excitation levels showed a bimodal distribution of QDs that can be effectively used in the design of solar cells with QDs in the active area.
The investigations are carried out in the frame of Megagrant № 14.B25.31.0020.